Stage and plasma processing apparatus

ABSTRACT

A stage includes a base having an accommodation space therein, a dielectric layer provided on a first surface of the base and having a placement surface on which a substrate is placed, the dielectric layer including therein a plurality of heaters, and a heater control board disposed in the accommodation space and configured to drive the plurality of heaters. The base has an inlet in a second surface thereof that is opposite the first surface, the inlet being configured to introduce a coolant into the accommodation space.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2019-152156, filed on Aug. 22, 2019, theentire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a stage and a plasma processingapparatus.

BACKGROUND

There is known a stage that attracts a substrate in a processingapparatus that performs a desired process such as an etching process onthe substrate.

Patent Document 1 discloses a stage for a plasma processing apparatus,which includes a power-feeding part that provides a transmission pathfor transmitting high-frequency power from a high-frequency powersource, an electrostatic chuck having a plurality of heaters, and aheater controller. Further, it is disclosed that the heater controlleris provided in an accommodation space surrounded by the transmissionpath.

PRIOR ART DOCUMENT Patent Document

-   Patent Document 1: Japanese Laid-Open Patent Publication No.    2018-206806

SUMMARY

According to embodiments of the present disclosure, there is provided astage including: a base having an accommodation space therein; adielectric layer provided on a first surface of the base and having aplacement surface on which a substrate is placed, the dielectric layerincluding therein a plurality of heaters; and a heater control boarddisposed in the accommodation space and configured to drive theplurality of heaters, wherein the base has an inlet in a second surfacethereof that is opposite the first surface, the inlet being configuredto introduce a coolant into the accommodation space.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate embodiments of the presentdisclosure, and together with the general description given above andthe detailed description of the embodiments given below, serve toexplain the principles of the present disclosure.

FIG. 1 is a schematic cross-sectional view illustrating an exemplarysubstrate-processing apparatus according to an embodiment.

FIG. 2 is a schematic cross-sectional view illustrating an exemplarystage according to an embodiment.

FIG. 3 is a perspective view illustrating an exemplary diffusion member.

DETAILED DESCRIPTION

Reference will now be made in detail to various embodiments, examples ofwhich are illustrated in the accompanying drawings. In the followingdetailed description, numerous specific details are set forth in orderto provide a thorough understanding of the present disclosure. However,it will be apparent to one of ordinary skill in the art that the presentdisclosure may be practiced without these specific details. In otherinstances, well-known methods, procedures, systems, and components havenot been described in detail so as not to unnecessarily obscure aspectsof the various embodiments.

Hereinafter, embodiments of the present disclosure will be describedwith reference to the accompanying drawings. In each of the drawings,the same components are denoted by the same reference numerals, andredundant descriptions may be omitted.

<Substrate-Processing Apparatus>

A substrate-processing apparatus (plasma processing apparatus) 1according to an embodiment will be described with reference to FIG. 1 .FIG. 1 is a schematic cross-sectional view illustrating an exemplarysubstrate-processing apparatus 1 according to an embodiment.

The substrate-processing apparatus 1 according to an embodiment includesa processing container 10. The processing container 10 has asubstantially cylindrical shape having a bottom, and is formed of, forexample, aluminum having an anodized surface. The processing container10 is grounded. A loading/unloading port 10 p is formed in the side wallof the processing container 10 so as to transport a wafer W. Theloading/unloading port 10 p is opened and closed by a gate valve 10 gprovided along the side wall of the processing container 10.

A support 11 is provided on the bottom portion of the processingcontainer 10. The support 11 is formed of an insulating material. Thesupport 11 has a substantially cylindrical shape and extends upwardsfrom the bottom portion of the processing container 10 in the processingcontainer 10. The support 11 supports the stage 12.

The stage 12 is provided within the processing container 10 andsupported by the support 11. The stage 12 includes a base 13 and anelectrostatic chuck 20. In addition, the base 13 has a first part 14serving as a lower electrode and a second part 15 serving as atransmission path for transmitting high-frequency power. The first part14 and the second part 15 are formed of a conductor such as aluminum.The first part 14 and the second part 15 are electrically connected. Anaccommodation space 17 for accommodating therein a heater control board18 to be described later is formed in the base 13.

The electrostatic chuck 20 is provided on the first part 14. The wafer Wis placed on the top surface of the electrostatic chuck 20. Theelectrostatic chuck 20 has a structure in which an electrode 20 a madeof a conductive film is embedded in a dielectric layer 20 b made of adielectric material. A DC power source 22 is connected to the electrode20 a. By applying a voltage from the DC power source 22 to the electrode20 a, an electrostatic force such as a Coulomb force is generated, andthe electrostatic chuck 20 attracts and holds the wafer W.

In addition, the electrostatic chuck 20 has a plurality of heaters 21.The heaters 21 are connected to the DC power source 23 via the heatercontrol board 18. By individually controlling the plurality of heaters21, the heater control board 18 adjusts the temperature of each zone ofa placement surface of the electrostatic chuck 20 so as to adjust thetemperature of a wafer W placed on the top surface of the electrostaticchuck 20.

An edge ring 24 is disposed on a peripheral edge portion of the stage 12so as to surround the edge of the wafer W. The edge ring 24 improves thein-plane uniformity of plasma processing on the wafer W. The edge ring24 may be formed of, for example, silicon, silicon carbide, or quartz.

A flow path 16 is provided inside the first part 14. A heat exchangemedium (e.g., brine or two-phase fluid of gas and liquid) is supplied tothe flow path 16 from a chiller unit (not illustrated) provided outsidethe processing container 10 via a pipe 25 a. The heat exchange mediumsupplied to the flow path 16 exchanges heat with the first part 14. Theheat exchange medium discharged from the flow path 16 is returned to thechiller unit through a pipe 25 b. As a result, the temperature of thewafer W placed on the electrostatic chuck 20 is adjusted.

The substrate-processing apparatus 1 is provided with a gas supply line26. The gas supply line 26 supplies a heat transfer gas (e.g., He gas)from a heat transfer gas supply mechanism (not illustrated) to the spacebetween the top surface of the electrostatic chuck 20 and the rearsurface of the wafer W.

An upper electrode 30 is provided above the stage 12 so as to face thestage 12. A plasma processing space is formed between the upperelectrode 30 and the stage 12.

The upper electrode 30 is provided so as to close the opening in theceiling of the processing container 10 via an insulative shield member37. The upper electrode 30 constitutes a surface facing the stage 12,and has an electrode plate 31 having therein a large number of gasejection holes 32, and an electrode support 33 configured to detachablysupport the electrode plate 31 and formed of a conductive material(e.g., aluminum having an anodized surface). The electrode plate 31 ismade of a silicon-containing material such as silicon or SiC. A gasdiffusion chamber 34 is provided inside the electrode support 33, and alarge number of gas flow holes 35 communicating with the gas ejectionholes 32 extend downwards from the gas diffusion chamber 34.

The electrode support 33 has a gas inlet 36 formed to guide theprocessing gas to the gas diffusion chamber 34, a gas supply pipe 40 isconnected to the gas inlet 36, and a processing gas supply source 41 isconnected to the gas supply pipe 40. The gas supply pipe 40 is providedwith a mass flow controller (MFC) 42 and an opening/closing valve 43 inthis order from the upstream side where the processing gas supply source41 is disposed. Then, the processing gas from the processing gas supplysource 41 passes through the gas supply pipe 40, the gas diffusionchamber 34, and the gas flow holes 35, and is ejected from the gasejection holes 32 in the form of a shower.

A first high-frequency power source 51 is connected to the second part15 of the stage 12 via a power-feeding rod 52 and a matcher 53. Thefirst high-frequency power source 51 applies high-frequency (HF) powerto the stage 12. The matcher 53 matches the internal impedance of thefirst high-frequency power source 51 with a load impedance. As a result,plasma is generated from the gas in the plasma processing space. The HFpower supplied from the first high-frequency power source 51 may beapplied to the upper electrode 30. When applying the HF power to thestage 12, the HF frequency may be in the range of 13 MHz to 100 MHz, andmay be, for example, 40 MHz.

A second high-frequency power source 54 is connected to the second part15 of the stage 12 via a power-feeding rod 55 and a matcher 56. Thesecond high-frequency power source 54 applies low-frequency (LF) powerto the stage 12. The matcher 56 matches the internal impedance of thesecond high-frequency power source 54 with a load impedance.Accordingly, ions are drawn into the wafer W on the stage 12. The secondhigh-frequency power source 54 outputs high-frequency power having afrequency in the range of 400 kHz to 13.56 MHz. A filter necessary forpassing predetermined high-frequency power to the ground may beconnected to the stage 12.

The LF frequency is lower than the HF frequency. The LF and HF voltagesor currents may be continuous waves or pulse waves. In this way, theshower head which supplies the gas, functions as the upper electrode 30,and the stage 12 functions as the lower electrode.

An exhaust port 10 e is provided in the bottom portion of the processingcontainer 10, and an exhaust apparatus 60 is connected to the exhaustport 10 e via an exhaust pipe 62. The exhaust apparatus 60 has a vacuumpump such as, for example, a turbo molecular pump, and depressurizes theinside of the processing container 10 to a desired degree of vacuum.

An annular baffle plate 61 is provided between the support 11 and theside wall of the processing container 10. As the baffle plate 61, analuminum material coated with ceramic such as Y₂O₃ may be used.

When performing a predetermined process such as an etching process inthe substrate-processing apparatus 1 having such a configuration, first,the gate valve 10 g is opened, a wafer W is loaded into the processingcontainer 10 through the loading/unloading port 10 p, and the wafer W isplaced on the stage 12. Then, a processing gas for a predeterminedprocess such as etching is supplied from the processing gas supplysource 41 to the gas diffusion chamber 34 at a predetermined flow rate,and is supplied into the processing container 10 through the gas flowholes 35 and the gas ejection holes 32. In addition, the inside of theprocessing container 10 is exhausted by the exhaust apparatus 60. As aresult, the internal pressure is controlled to a set value within therange of, for example, 0.1 to 150 Pa.

HF power is applied to the stage 12 from the first high-frequency powersource 51 in the state in which the etching gas is introduced into theprocessing container 10 in this manner. In addition, LF power is appliedfrom the second high-frequency power source 54 to the stage 12. Further,a DC voltage is applied from the DC power source 22 to the electrode 20a so as to hold the wafer W on the stage 12. Further, a DC voltage isapplied from the DC power source 23 to the heaters 21 so as to adjustthe temperature of the wafer W.

The gas ejected from the gas ejection holes 32 in the upper electrode 30is dissociated and ionized mainly by the high-frequency power of HF soas to be turned into plasma, and a process such as etching is performedon the target surface to be processed of the wafer W by radicals andions in the plasma. In addition, by applying the high-frequency power ofLF to the stage 12, the ions in the plasma are controlled to facilitatethe process such as etching.

The substrate-processing apparatus 1 is provided with a controller 70configured to control the overall operation of the apparatus. The CPUprovided in the controller 70 executes a desired plasma process such asetching according to a recipe stored in memory such as ROM or RAM. Inthe recipe, process time, pressure (gas exhaust), high-frequency powerof HF and high-frequency power of LF, voltage, and various gas flowrates, which are apparatus control information on process conditions,may be set. In the recipe, for example, the temperatures inside theprocessing container (e.g., the temperature of the upper electrode, thetemperature of the side wall of the processing container, thetemperature of the wafer W, and the temperature of the electrostaticchuck) and the temperature of the coolant output from the chiller may beset. In addition, a recipe representing these programs and processingconditions may be stored in a hard disc or semiconductor memory. Inaddition, the recipe may be set at a predetermined position to be readout in the state of being stored in a non-transitory storage mediumreadable by a portable computer, such as a CD-ROM or DVD.

Next, the stage 12 will be further described with reference to FIG. 2 .FIG. 2 is a schematic cross-sectional view illustrating an exemplarystage 12 according to an embodiment.

The first part 14 has a substantially disc shape with a recess formed onthe bottom surface thereof, and is made of a conductive material such asaluminum. The second part 15 has a substantially disc shape with arecess formed on the top surface thereof, and is made of a conductivematerial such as aluminum. The base 13 is formed by fitting the secondpart 15 into the first part 14, and an accommodation space 17 is formedinside the base 13. In addition, the second part 15 is fitted into thefirst part 14 so as to be electrically connected.

The electrostatic chuck 20 is provided on the first surface (the topsurface of the first part 14) of the base 13. A terminal portion 15 a isformed in the center of the second surface (the bottom surface of thesecond part 15) of the base 13, which is the surface opposite the firstsurface of the base 13. Power-feeding rods 52 and 55 (see FIG. 1 ) areconnected to the terminal portion 15 a, and thus high-frequency powers(HF, LF) are applied thereto. The high-frequency waves applied to theterminal portion 15 a are transmitted from the second part 15 to thefirst part 14 serving as the lower electrode.

The heater control board 18 is disposed in the accommodation space 17.On the heater control board 18, devices, such as an FET which is aswitching element for individually switching the energization of theplurality of heaters 21, an FPGA for controlling the switching element,a DC-DC converter, and a resistor, are mounted. The DC power source 23(see FIG. 1) supplies power to the heater control board 18 via a filter(not illustrated). A power-feeding line is wired from the heater controlboard 18 to each heater 21.

As described above, since the terminal portion 15 a is provided at thecenter of the bottom surface of the second part 15, the accommodationspace 17 formed in the base 13 may be surrounded by the high-frequencytransmission path. In addition, the heater control board 18 disposed inthe accommodation space 17 surrounded by the high-frequency transmissionpath can distribute the energization to the plurality of heaters 21 toswitch them individually. As a result, a filter for suppressing inflowof high-frequency power from the stage 12 to the DC power source 23 maybe provided between the heater control board 18 and the DC power source23, making it possible to reduce the number of filters.

Here, when plasma is generated so as to process the wafer W in thesubstrate-processing apparatus 1, the temperatures of the wafer W andthe stage 12 become high due to the heat input from the plasma. Thetemperature of the wafer W is adjusted to be, for example, 50 degrees C.to 150 degrees C., and the temperature of the base 13 is adjusted to be,for example, 20 degrees C. to 100 degrees C. Therefore, heat is input tothe heater control board 18 from the base 13 (the inner wall surface ofthe base defining the accommodation space 17). In addition, the deviceson the heater control board 18 are also heated. For this reason, thecharacteristics of the devices (e.g., the switching characteristics ofthe FET and the resistance value of the resistor) may change, and whenthe heat is excessively generated, the devices on the heater controlboard 18 may fail.

When the wafer W is processed at a low temperature in thesubstrate-processing apparatus 1, a low-temperature heat exchange mediumis supplied to the flow path 16, and the temperatures of the wafer W andthe stage 12 become low. The temperature of the wafer W is adjusted to,for example, −100 degrees C. to 0 degrees C., and the temperature of thebase 13 is adjusted to, for example, −120 degrees C. to 0 degrees C.Therefore, dew condensation may occur on the inner wall of the base 13defining the accommodation space 17, and the condensed water may adhereto the heater control board 18.

The stage 12 according to the embodiment has inlets 28 a and 28 b forintroducing coolant into the accommodation space 17, and an outlet 29for discharging the coolant from the accommodation space 17. As thecoolant, air blown from a DC fan 27 may be used. In addition, thecoolant is not limited thereto, and may be, for example, dry air or aninert gas. Accordingly, the heater control board 18 can be air-cooled.In addition, when a wafer W is processed at a low temperature in thesubstrate-processing apparatus 1, it is possible to suppress theoccurrence of dew condensation.

Here, the inlets 28 a and 28 b and the outlet 29 are provided on thesecond surface of the base 13, that is, the second part 15. Accordingly,compared with the case where the inlets and the outlet are provided inthe side surface of the base 13, it is possible to secure symmetry inthe circumferential direction of the stage 12 in the high-frequencytransmission path.

The inlet 28 a (first inlet port) is provided at a position not coveredwith the heater control board 18. In other words, the inlet 28 a isprovided at a position different from the position where the heatercontrol board 18 is disposed when viewed from a direction perpendicularto the placement surface of the stage 12. Diffusion members 80 areprovided within the accommodation space 17 in one-to-one correspondencewith the inlets 28 a. The diffusion member 80 will be further describedwith reference to FIG. 3 . FIG. 3 is a perspective view illustrating anexemplary diffusion member 80.

The diffusion member 80 has a shape in which the lower side and thefront side are open. The diffusion member 80 is formed of a materialhaving heat resistance. In addition, the diffusion member 80 is formedof a material having low thermal conductivity. For example, thediffusion member 80 is formed of a resin material such as polyvinylchloride (PVC) or polyphenylene sulfide (PPS).

The diffusion member 80 has a rear wall portion 81, an upper wallportion 82, and side wall portions 83 and 84. The rear wall portion 81is formed so as to extend upwards. The upper wall portion 82 is formedso as to extend forwards from the rear wall portion 81. A fillet portion85 is formed between the inner surface of the rear wall portion 81 andthe inner surface of the upper wall portion 82. Accordingly, the innersurface of the rear wall portion 81 and the inner surface of the upperwall portion 82 are continuous surfaces, with the inner surface of thefillet portion 85 interposed therebetween.

The side wall portions 83 and 84 are formed so as to extend forwardsfrom the rear wall portion 81. The inner walls of the side wall portions83 and 84 are inclined outwards at an angle θ with respect to the frontside. That is, the interval between the inner wall of the side wallportion 83 and the inner wall of the side wall portion 84 is formed soas to be widened from the rear side (the side of the rear wall portion81) toward the front side (the opened side).

As illustrated in FIG. 2 , the opened lower side of the diffusion member80 is disposed so as to correspond to the inlet 28 a. Further, theopened front side of the diffusion member 80 is arranged so as to facethe center of the accommodation space 17.

The coolant supplied from the DC fan 27 is supplied upwards into theaccommodation space 17 from the inlet 28 b. The coolant supplied fromthe inlet 28 a into the accommodation space 17 changes its orientationalong the inner surface of the rear wall portion 81, the inner surfaceof the fillet portion 85, and the inner surface of the upper wallportion 82, and is directed toward the center of the accommodation space17. As a result, the coolant is supplied to the space 17 a which is thepart of the accommodation space 17 that is above the heater controlboard 18. Further, some of the coolant is supplied to the space 17 bwhich is the part of the accommodation space 17 that is below the heatercontrol board 18. In addition, since the inner walls of the side wallportions 83 and 84 are formed so as to be widened from the rear sidetoward the front side, the coolant flows so as to diffuse in a widerange. As a result, the coolant supplied from the inlet 28 a into theaccommodation space 17 diffuses throughout the accommodation space 17and cools the heater control board 18.

In addition, since the diffusion member 80 is made of a material havinglow thermal conductivity, the coolant is prevented from being heated bythe heat of the base 13. In addition, it is possible to suppress thefirst part 14 from being locally cooled by the coolant supplied from theinlet 28 a.

The inlet 28 b (the second inlet) is provided at a position covered withthe heater control board 18. In other words, the inlet 28 b is providedat a position overlapping the position where the heater control board 18is disposed when viewed from a direction perpendicular to the placementsurface of the stage 12. That is, the inlet 28 b is arranged below theheater control board 18. The coolant supplied from the DC fan 27 issupplied upwards into the accommodation space 17 from the inlet 28 b.The coolant supplied from the inlet 28 b into the accommodation space 17is directly injected to the heater control board 18 so as to cool theheater control board 18. Further, the coolant cools the heater controlboard 18 while flowing through the space 17 b.

By directly shooting the coolant to the heater control board 18, it ispossible to suppress the first part 14 from being locally cooled by thecoolant supplied from the inlet 28 b.

The inlet 28 b may be provided at, for example, a position spaced apartfrom the inlet 28 a. As a result, since the cooling medium from theinlet 28 b can be supplied to the region where cooling by the coolingmedium from the inlet 28 a decreases, the cooling of the heater controlboard 18 can be supplemented.

A heat shield plate 90 is provided along the inner wall of the base 13defining the accommodation space 17. The heat shield plate 90 is formedof a heat-resistant material. The heat shield plate 90 is formed of amaterial having low thermal conductivity. For example, the heat shieldplate 90 is formed of a resin material such as polyvinyl chloride (PVC)or polyphenylene sulfide (PPS). The heat shield plate 90 is provided ona surface of the member defining the accommodation space 17 from anupper side of the accommodation space 17, that is, on a surface of thefirst part 14 facing the accommodation space 17. By providing the heatshield plate 90, heat conduction from the first part 14 to the heatercontrol board 18 can be suppressed. In addition, when a wafer W isprocessed at a low temperature in the substrate-processing apparatus 1,it is possible to suppress the occurrence of dew condensation.

A gap 91 is provided between the surface of the first part 14 facing theaccommodation space 17 and the heat shield plate 90. Accordingly, it ispossible to suppress heat conduction between the first part 14 and theheat shield plate 90, and to further suppress heat conduction from thefirst part 14 to the heater control board 18.

In addition, the heat shield plate 90 is also provided on a surface ofthe member defining the accommodation space 17 from a lower side of theaccommodation space 17, that is, on a surface of the second part 15facing the accommodation space 17. As a result, heat conduction to theheater control board 18 from the second part 15 heated or cooled by heattransfer from a portion of the second part 15 that is joined with thefirst part 14 can be suppressed.

In addition, a gap 92 is provided between the surface of the second part15 facing the accommodation space 17 and the heat shield plate 90.Accordingly, heat conduction from the second part 15 to the heatercontrol board 18 can be further suppressed.

Further, a water-absorbing sheet or a moisture-absorbing sheet may beattached to the heat shield plate 90. Accordingly, it is possible tofurther suppress adhesion of the condensed water to the heater controlboard 18.

As described above, with the stage 12 according to the embodiment, theheater control board 18 can be appropriately cooled, and thus the heatercontrol board 18 can be stably operated. Moreover, dew condensation canbe prevented.

In the foregoing, the embodiment of a substrate-processing apparatus 1or the like has been described. However, the present disclosure is notlimited to the above-described embodiment or the like, and can bevariously modified and improved within the scope of the presentdisclosure described in the claims.

In FIG. 2 , the number of inlets 28 a and 28 b and the number of outlets29 are illustrated as two and one, respectively. The numbers are notlimited to thereto, and multiple outlets 29 may be provided.

Although the power source of the heater 21 is described as a DC powersource 23, it may be an AC power source.

According to an aspect, it is possible to provide a stage and a plasmaprocessing apparatus that improve the stability of operations of a boarddisposed in the accommodation space inside the stage.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the embodiments described herein maybe embodied in a variety of other forms. Furthermore, various omissions,substitutions and changes in the form of the embodiments describedherein may be made without departing from the spirit of the disclosures.The accompanying claims and their equivalents are intended to cover suchforms or modifications as would fall within the scope and spirit of thedisclosures.

1-20. (canceled)
 21. A substrate processing apparatus comprising: achamber; a substrate support disposed in the chamber, the substratesupport including: a conductive base having an upper portion and a lowerportion, the upper portion being electrically connected to the lowerportion, the upper portion having a flow path, an accommodation spacebeing formed between the upper portion and the lower portion; anelectrostatic chuck disposed on the conductive base; a plurality ofheaters disposed in the electrostatic chuck; and a heater control boarddisposed in the accommodation space and configured to drive theplurality of heaters; a chiller unit configured to supply a heatexchange medium into the flow path; and a fluid supply unit configuredto supply a fluid into the accommodation space.
 22. The substrateprocessing apparatus according to claim 21, wherein the fluid supplyunit includes a fan configured to supply air as the fluid into theaccommodation space.
 23. The substrate processing apparatus according toclaim 21, wherein the fluid is dry air.
 24. The substrate processingapparatus according to claim 21, wherein the fluid is an inert gas. 25.The substrate processing apparatus according to claim 21, furthercomprising: a heat shield plate disposed in the accommodation space. 26.The substrate processing apparatus according to claim 25, wherein theheat shield plate is disposed between an upper surface defining theaccommodation space and the heater control board.
 27. The substrateprocessing apparatus according to claim 26, wherein a gap is formedbetween the upper surface defining the accommodation space and the heatshield plate.
 28. The substrate processing apparatus according to claim27, further comprising: a diffusion member disposed in the accommodationspace and configured to diffuse the fluid supplied into theaccommodation space.
 29. The substrate processing apparatus according toclaim 28, wherein the diffusion member is configured to change anorientation of a flow of the fluid supplied into the accommodation spacesuch that the fluid flows between the upper surface defining theaccommodation space and the heater control board.
 30. The substrateprocessing apparatus according to claim 29, wherein the diffusion memberis formed of a material having a lower thermal conductivity than athermal conductivity of the conductive base.
 31. The substrateprocessing apparatus according to claim 21, wherein the lower portion ofthe conductive base has at least one inlet configured to supply thefluid from the fluid supply unit into the accommodation space.
 32. Thesubstrate processing apparatus according to claim 31, wherein the lowerportion of the conductive base has at least one outlet configured todischarge the fluid supplied into the accommodation space.
 33. Asubstrate processing apparatus comprising: a chamber; a substratesupport disposed in the chamber, the substrate support including: a basehaving an upper portion and a lower portion, an accommodation spacebeing formed between the upper portion and the lower portion; anelectrostatic chuck disposed on the base; a plurality of heaters; and aheater control board disposed in the accommodation space and configuredto drive the plurality of heaters; and a fluid supply unit configured tosupply a fluid into the accommodation space.
 34. The substrateprocessing apparatus according to claim 33, wherein the fluid supplyunit includes a fan configured to supply air as the fluid into theaccommodation space.
 35. The substrate processing apparatus according toclaim 33, wherein the fluid is dry air.
 36. The substrate processingapparatus according to claim 33, wherein the fluid is an inert gas. 37.The substrate processing apparatus according to claim 33, wherein thelower portion of the base has at least one inlet configured to supplythe fluid from the fluid supply unit into the accommodation space. 38.The substrate processing apparatus according to claim 37, wherein thelower portion of the base has at least one outlet configured todischarge the fluid supplied into the accommodation space.